| PART |
Description |
Maker |
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| IKW50N65H5 IKW50N65H5-15 |
High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode
|
Infineon Technologies A...
|
| IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| IXYH50N120C3D1 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| IXYN82N120C3 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| RJH60F3DPQ-A0 |
600 V - 20 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IGP30N65F5 |
650V IGBT high speed switching series fifth generation
|
Infineon Technologies A...
|
| RJH1BF6RDPQ-80 RJH1BF6RDPQ-80-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
